bm logo2020 vi

TRƯỜNG ĐẠI HỌC KHOA HỌC TỰ NHIÊN, ĐẠI HỌC QUỐC GIA THÀNH PHỐ HỒ CHÍ MINH

KHOA VẬT LÝ - VẬT LÝ KỸ THUẬT

BỘ MÔN VẬT LÝ HẠT NHÂN - NGÀNH KỸ THUẬT HẠT NHÂN - NGÀNH VẬT LÝ Y KHOA

A simple approach for developing model OF Si(Li) detector in Monte Carlo simulation

Huynh Dinh Chuong, Nguyen Thi Truc Linh, Le Thi Ngoc Trang, Vo Hoang Nguyen, Le Hoang Minh , Chau Thanh Tai, Tran Thien Thanh

Abstract

In this paper, a simple approach for developing the model of a Si(Li) detector in Monte Carlo simulations is presented and validated. Experimental measurements using “point-like” standard radioactive sources including 133Ba, 137Cs, 152Eu, 154Eu, 241Am were performed for both configurations with and without collimator, respectively. The MCNP6 code was used for Monte Carlo simulation of photon transport inside the models constructed similar to these configurations. Firstly, an initial model of the Si(Li) detector was constructed based on the manufacturer's specifications, but the simulated efficiency shows a very high discrepancy from the experiment. Then, the critical geometric parameters of the model of Si(Li) detector were improved step-by-step to achieve the optimized model. For the optimized model, a good agreement was obtained between the experimental and simulated results. The relative deviations of experimental and simulated efficiencies are less than 4% with energies in the range of 12–60 keV for both configurations.

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